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1

[IEEE 2007 IEEE International Interconnect Technology Conferencee - Burlingame, CA, USA (2007.06.4-2007.06.6)] 2007 IEEE International Interconnect Technology Conferencee - Self-Formed Barrier Technology using CuMn Alloy Seed for Copper Dual-Damascene Interconnect with porous-SiOC/porous-PAr Hybrid Dielectric

Watanabe, T., Nasu, H., Usui, T., Minamihaba, G., Kurashima, N., Gawase, A., Shimada, M., Yoshimizu, Y., Uozumi, Y., Shibata, H.

Year:

2007

Language:

english

File:

PDF, 813 KB

english, 2007

2

Uniaxial-stress effect on the antiferromagnetic state in

M. Yokoyama, A. Gawase, H. Amitsuka, K. Tenya, H. Yoshizawa

Journal:

Physica B: Condensed Matter

Year:

2006

Language:

english

File:

PDF, 109 KB

english, 2006

3

Total Performance of 32-nm-Node Ultralow-/Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica

Oda, N., Chikaki, S., Kubota, T., Nakao, S., Tomioka, K., Soda, E., Nakamura, N., Gawase, A., Nogawa, J., Kawashima, Y., Hayashi, R., Suzuki, T., Saito, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.57 MB

english, 2010

4

[IEEE 2009 IEEE International Interconnect Technology Conference - IITC - Sapporo, Japan (2009.06.1-2009.06.3)] 2009 IEEE International Interconnect Technology Conference - Packaging characteristics of 6-layer ultra low-k/Cu dual damascene interconnect featuring advanced scalable porous silica (k=2.1)

Chikaki, S., Soda, E., Gawase, A., Suzuki, T., Kawashima, Y., Oda, N., Saito, S.

Year:

2009

Language:

english

File:

PDF, 781 KB

english, 2009

5

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Feasibility study of 70nm pitch Cu/porous low-k D/D integration featuring EUV lithography toward 22nm generation

Nakamura, N., Oda, N., Soda, E., Hosoi, N., Gawase, A, Aoyama, H., Tanaka, Y., Kawamura, D., Chikaki, S., Shiohara, M., Tarumi, N., Kondo, S., Mori, I., Saito, S.

Year:

2009

Language:

english

File:

PDF, 1.68 MB

english, 2009

6

[IEEE 2008 International Interconnect Technology Conference - IITC - Burlingame, CA, USA (2008.06.1-2008.06.4)] 2008 International Interconnect Technology Conference - Robust BEOL Process Integration with Ultra Low-k (k=2.0) Dielectric and Self-Formed MnOx Barrier Technology for 32 nm-node and beyond

Watanabe, T., Hayashi, Y., Tomizawa, H., Usui, T., Gawase, A., Shimada, M., Watanabe, K., Shibata, H.

Year:

2008

Language:

english

File:

PDF, 734 KB

english, 2008

7

[IEEE 2007 IEEE International Interconnect Technology Conferencee - Burlingame, CA, USA (2007.06.4-2007.06.6)] 2007 IEEE International Interconnect Technology Conferencee - A Study of Adhesion and Improvement of Adhesion Energy Using Hybrid Low-k (porous-PAr/ porous-SiOC(k=2.3/2.3)) Structures with Multi-layered Cu Interconnects for 45-nm Node Devices

Usami, T., Maruyama, C., Tagami, M., Watanabe, K., Kameshima, T., Masuda, H., Shimada, M., Gawase, A., Kagawa, Y., Nakamura, N., Miyajima, H., Naruse, H., Enomoto, Y., Kitano, T., Sekine, M.

Year:

2007

Language:

english

File:

PDF, 6.35 MB

english, 2007

8

High-Etching-Selectivity Barrier SiC (k

J. Nakahira, S. Nagano, A. Gawase, Y. Ohashi, H. Shimizu, S. Chikaki, N. Oda, S. Kondo, S. Hasaka, S. Saito

Year:

2010

Language:

english

File:

PDF, 722 KB

english, 2010

9

Trench Sidewall Elimination Effect on Line-to-Line Leakage Current in Scalable Porous Silica ( k = 2.1)/Cu Interconnect Structure

Gawase, Akifumi, Chikaki, Shinichi, Nakamura, Naofumi, Soda, Eiichi, Oda, Noriaki, Saito, Shuichi

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1009 KB

english, 2010

10

New Magnetic State in Incommensurate Magnetic Phase of Heavy-Fermion Superconductor CeRh 0.6 Co 0.4 In 5

Yokoyama, Makoto, Amitsuka, Hiroshi, Matsuda, Kei, Gawase, Akifumi, Oyama, Narumi, Kawasaki, Ikuto, Tenya, Kenichi, Yoshizawa, Hideki

Journal:

Journal of the Physical Society of Japan

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006